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| SI6925DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.05 @ VGS = 4.5 V 20 0.06 @ VGS = 3.0 V 0.08 @ VGS = 2.5 V ID (A) "3.4 "3.1 "2.7 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 SI6925DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "12 "3.4 "2.7 "30 1.25 1 Unit V A W 0.64 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70631 S-49455--Rev. A, 17-Dec-96 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 125 Unit _C/W 2-1 SI6925DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.4 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = 3.0 V, ID = 3.1 A VGS = 2.5 V, ID = 2.7 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 10 V, ID = 3.4 A IS = 1.25 A, VGS = 0 V 10 0.038 0.044 0.048 18 0.7 1.2 0.05 0.07 0.08 S V W 0.5 "100 1 5 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W V, ID ^ 1 A, VGEN = 4 5 V RG = 6 W A 4.5 V, VDS = 6 V, VGS = 4 5 V ID = 3.4 A V 4.5 V, 34 7.5 1.2 1.8 10 25 40 10 50 20 50 60 20 90 ns 15 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70631 S-49455--Rev. A, 17-Dec-96 SI6925DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 3 V 24 2.5 V I D - Drain Current (A) I D - Drain Current (A) 25_C 18 125_C 12 18 2V 12 24 TC = -55_C 30 Transfer Characteristics 6 1.5 V 1V 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 VGS = 2.5 V r DS(on)- On-Resistance ( W ) 0.08 900 VGS = 3 V 0.06 C - Capacitance (pF) 1200 Capacitance Ciss 600 0.04 VGS = 4.5 V 0.02 300 Crss Coss 0 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 VDS = 10 V ID = 3.4 A 1.8 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on)- On-Resistance ( W ) (Normalized) 3.6 1.6 VGS = 4.5 V ID = 3.4 A 1.4 2.7 1.2 1.8 1.0 0.9 0.8 0 0 2 4 6 8 0.6 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70631 S-49455--Rev. A, 17-Dec-96 www.vishay.com S FaxBack 408-970-5600 2-3 SI6925DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on)- On-Resistance ( W ) 0.08 ID = 3.4 A 0.06 TJ = 25_C 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.22 0.14 ID = 250 mA V GS(th) Variance (V) 0.06 20 -0.02 -0.10 -0.18 -0.26 -0.34 -50 5 Power (W) 30 25 Single Pulse Power 15 10 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70631 S-49455--Rev. A, 17-Dec-96 |
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